Substrate
Aluminum Nitride (AlN) and Beryllium Oxide (BeO)
High Power Laser Diode & Pumped Laser Diode sub-mounts have a wide range of high and low power communication applications.
Substrate
Aluminum Nitride (AlN) and Beryllium Oxide (BeO)
Sizes
As small as .020"x.020" in production quantity
Standard Thickness of .005",.010",.015" and .025"
Thickness tolerances of +/- 10% Premium tolerances of 5% offered
Camber 0.0005"/inch
Metalization
Standard Ti/Pt/Au
Pre-deposited Solder (Sn, AuSn) available
Resistor Pads
TaN2 Resistors 50 and 100 ohms/sq. with tolerances of +/-1%
Features
0.25 mil (0.00025") Lines and Space Tolerances of +/- 0.05 mil (0.00005")
Thru-Hole and Wrap-Around capabilities
Aluminum Nitride (AlN) Properties
Thermal Conductivity 170 W/mK (190 and 230 W/mK upon request)
Electrical resistivity >1014
Dielectric constant 8.6
Dielectric loss 0.0005
Surface Finish (Polished) <2 microinches
Thermal expansion coefficient 4.2x10-6 (CTE)
Beryllium Oxide (BeO) Properties
Thermal Conductivity 270 W/mK
Electrical resistivity >1014
Dielectric constant 6.5
Dielectric loss 0.0004
Surface Finish (Polished) <4 microinches
Thermal expansion coefficient 9.0x10-6 (CTE)
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